2N965 Specs and Replacement
Type Designator: 2N965
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO18
2N965 Substitution
- BJT ⓘ Cross-Reference Search
2N965 datasheet
Detailed specifications: 2N961, 2N961-46, 2N962, 2N962-46, 2N963, 2N964, 2N964-46, 2N964A, BC639, 2N966, 2N967, 2N968, 2N969, 2N97, 2N970, 2N971, 2N972
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