BC847BDW1T3G Specs and Replacement

Type Designator: BC847BDW1T3G

SMD Transistor Code: 1F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT363

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BC847BDW1T3G datasheet

 ..1. Size:144K  onsemi

bc847bdw1t3g bc846bdw1t1g.pdf pdf_icon

BC847BDW1T3G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q... See More ⇒

 0.1. Size:144K  onsemi

sbc847bdw1t3g.pdf pdf_icon

BC847BDW1T3G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q... See More ⇒

 0.2. Size:209K  lrc

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BC847BDW1T3G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848... See More ⇒

 0.3. Size:280K  lrc

lbc847bdw1t1g lbc847bdw1t3g.pdf pdf_icon

BC847BDW1T3G

LBC847BDW1T1G S-LBC847BDW1T1G NPN Dual General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring SC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device... See More ⇒

Detailed specifications: BC847ALT1G, BC847AM, BC847AMB, BC847ATT1, BC847AW-G, BC847AWR, BC847AWT1G, BC847BDW1T1G, BD335, BC847BF, BC847BFA, BC847BFZ, BC847B-G, BC847BLT1G, BC847BLT3G, BC847BM, BC847BMB

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