BC848BL3 Specs and Replacement
Type Designator: BC848BL3
SMD Transistor Code: 1F
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 0.95 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: TSLP3-1
BC848BL3 Substitution
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BC848BL3 datasheet
BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin ... See More ⇒
BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20... See More ⇒
... See More ⇒
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-... See More ⇒
Detailed specifications: BC847QAS, BC847XMB, BC848A-G, BC848ALT1G, BC848AW-G, BC848AWT1G, BC848BF, BC848B-G, BC639, BC848BLT1G, BC848BLT3G, BC848BW-G, BC848BWT1G, BC848CDW1T1G, BC848CDXV6T1G, BC848C-G, BC848CLT1G
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