All Transistors. BC850S Datasheet

 

BC850S Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC850S
   SMD Transistor Code: 2F_2G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23

 BC850S Transistor Equivalent Substitute - Cross-Reference Search

   

BC850S Datasheet (PDF)

 ..1. Size:272K  first silicon
bc850s bc849s.pdf

BC850S
BC850S

SEMICONDUCTORBC846S ~BC850STECHNICAL DATAGeneral Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 V3 Machine Model: >400 V21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcBC846 65BC847, BC850 45BC848, BC849 303COLLECTORCollectorBase Voltage VCBO VdcBC846

 0.1. Size:182K  infineon
bc846series bc847series bc848series bc849series bc850series.pdf

BC850S
BC850S

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.1. Size:207K  motorola
bc846awt bc847awt bc848awt bc849awt bc850awt.pdf

BC850S
BC850S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/DGeneral Purpose TransistorsBC846AWT1,BWT1NPN SiliconBC847AWT1,BWT1,COLLECTOR CWT1These transistors are designed for general purpose amplifier3BC848AWT1,BWT1,applications. They are housed in the SOT323/SC70 which isdesigned for low power surface mount applications.CWT11BASE2EMITTERMAX

 9.2. Size:220K  motorola
bc846alt bc847alt bc848alt bc849alt bc850alt.pdf

BC850S
BC850S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC846ALT1/DBC846ALT1,BLT1General Purpose TransistorsBC847ALT1,NPN SiliconCOLLECTORBLT1,CLT1 thru3BC850ALT1,BLT1,1 CLT1BASEBC846, BC847 and BC848 areMotorola Preferred Devices2EMITTERMAXIMUM RATINGSBC847 BC848BC850 BC849Rating Symbol BC846 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1C

 9.3. Size:54K  philips
bc849w bc850w 3.pdf

BC850S
BC850S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BC849W; BC850WNPN general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATI

 9.4. Size:122K  philips
bc849w bc850w.pdf

BC850S
BC850S

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC849W; BC850WNPN general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheetNPN general purpose transistors BC849W; BC850WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

 9.5. Size:133K  philips
bc849 bc850.pdf

BC850S
BC850S

DISCRETE SEMICONDUCTORS DATA SHEETBC849; BC850NPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheetNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

 9.6. Size:51K  philips
bc849 bc850 5.pdf

BC850S
BC850S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC849; BC850NPN general purpose transistors1999 Apr 08Product specificationSupersedes data of 1998 Aug 06Philips Semiconductors Product specificationNPN general purpose transistors BC849; BC850FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

 9.7. Size:136K  fairchild semi
bc846 bc847 bc848 bc849 bc850-series.pdf

BC850S
BC850S

April 2011BC846 - BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC8502 Complement to BC856 ... BC860SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

 9.8. Size:350K  nxp
bc849b bc849c bc850b bc850c.pdf

BC850S
BC850S

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.9. Size:58K  samsung
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

NPN EPITAXIALBC846/847/848/849/850 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO:BC846 80 V:BC847/850 50 V:BC848/849 30 VCollector E

 9.10. Size:273K  siemens
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

NPN Silicon AF Transistors BC 846 ... BC 850Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,BC 859, BC 860 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 846 A 1As Q62702-C1772 B E C SOT-23BC 846 B 1Bs Q6

 9.11. Size:272K  siemens
bc846w bc847w bc848w bc849w bc850w.pdf

BC850S
BC850S

NPN Silicon AF Transistor BC 846 W ... BC 850 WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,BC 858 W,BC 859 W,BC 860 W (PNP)Type Marking Ordering code Pin Configuration Package(tape and reel) 1 2 3B E CBC 846 AW 1 As Q62702-C2319 SO

 9.12. Size:34K  diodes
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

BC846 BC847SOT23 NPN SILICON PLANAR BC848 BC849GENERAL PURPOSE TRANSISTORSBC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 EC 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

 9.13. Size:876K  infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf

BC850S
BC850S

BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin

 9.14. Size:180K  infineon
bc848bl3 bc850bf.pdf

BC850S
BC850S

BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.16. Size:111K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 9.17. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.18. Size:158K  onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC850S
BC850S

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.19. Size:116K  onsemi
nsvbc850blt1g.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 9.20. Size:108K  onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device

 9.21. Size:216K  onsemi
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf

BC850S
BC850S

BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A

 9.22. Size:131K  onsemi
bc850clt1g bc849blt1g.pdf

BC850S
BC850S

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 9.23. Size:131K  onsemi
bc848alt1g bc850blt1g.pdf

BC850S
BC850S

BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V

 9.24. Size:116K  onsemi
nsvbc850clt1g.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-

 9.25. Size:131K  onsemi
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc

 9.26. Size:31K  kec
bc849 bc850.pdf

BC850S

SEMICONDUCTOR BC849/850TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LFEATURESDIM MILLIMETERSFor Complementary With PNP Type BC859/860._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.

 9.27. Size:204K  wietron
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

BC846A/B-BC847A/B/CBC848A/B/C-BC849B/CBC850B/CGeneral Purpose TransistorNPN Silicon COLLECTOR3MARKING DIAGRAM33XX = Device11 Code (See2BASE Table Below)SOT-23*Moisture Sensitivity Level: 11 2*ESD Rating - Human Body Model:>4000V 2EMITTER -Machine Model:>400V( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emi

 9.28. Size:351K  willas
bc846 bc847 bc848 bc850-xlt1.pdf

BC850S
BC850S

BC8 6A/BLT1FM120-M BC8 7A/B/CLT1WILLASTHRUBC8 8A/B/CLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose Transistors SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface

 9.29. Size:393K  semtech
bc846 bc847 bc848 bc849 bc850.pdf

BC850S

 9.30. Size:242K  semtech
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC850S
BC850S

BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

 9.31. Size:403K  lrc
lbc850clt1g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.32. Size:402K  lrc
lbc850blt1g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

 9.33. Size:402K  lrc
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.34. Size:404K  lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.35. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.36. Size:278K  lrc
lbc850bwt1g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846AWT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO VdcSOT323 /SC70

 9.37. Size:227K  lrc
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

BC850S
BC850S

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

 9.38. Size:929K  kexin
bc849w bc850w.pdf

BC850S
BC850S

SMD Type TransistorsNPN TransistorsBC849W ~ BC850W(KC849W ~ KC850W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC859W/BC860WC1.Base2.EmitterB3.CollectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC849W 30 Collector - Base Voltage VCBOBC850W 50BC849W 30 V Collector - Emitter Voltage VC

 9.39. Size:1205K  kexin
bc849 bc850.pdf

BC850S
BC850S

SMD Type TransistorsNPN TransistorsBC849~BC850 (KC849~KC850)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). PNP complements: BC859 and BC860. 1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

 9.40. Size:446K  panjit
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf

BC850S
BC850S

BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per

 9.41. Size:536K  panjit
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf

BC850S
BC850S

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

 9.42. Size:1070K  panjit
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf

BC850S
BC850S

BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic

 9.43. Size:330K  panjit
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf

BC850S
BC850S

BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha

 9.44. Size:833K  slkor
bc849b bc850b bc849c bc850c.pdf

BC850S
BC850S

BC849-BC850NPN Transistors321.BaseFeatures2.EmitterLow current (max. 100 mA)1 3.CollectorLow voltage (max. 45 V). Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit30 Vcollector-base voltage VCBO50 V30 Vcollector-emitter voltage VCEO45 Vemitter-base voltage VEBO 5Vcollector current (DC) IC 100 mApeak collector curr

 9.45. Size:518K  slkor
bc846w bc847w bc848w bc849w bc850w.pdf

BC850S
BC850S

BC846W-BC850WNPN Silicon Epitaxial Planar Transistorfor general purpose and switching applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

 9.46. Size:364K  cn shikues
bc849b bc849c bc850b bc850c.pdf

BC850S
BC850S

BC849--BC850NPN General Purpose TransistorsNPN General Purpose Transistors BC849, BC850 Features Low current (max. 100 mA) Low voltage (max. 45 V). REV.08 1 of 2BC849--BC850Electrical Characteristics Ta = 25 *1 VBEsat decreases by about 1.7 mV/K with increasing temperature.decreases by about 1.7 mV/K with increasing temperature. *2 VBE decreases by about 2 mV/K wi

 9.47. Size:2177K  wpmtek
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC850S
BC850S

BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val

 9.48. Size:2167K  cn twgmc
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

BC846-BC850BC846/847/848/849/850 TRANSISTORNPNFEATURESSOT-23 Low current (max. 100 mA) Low voltage (max. 65 V).1BASE 2EMITTER APPLICATIONS3COLLECTOR General purpose switching and amplification.DESCRIPTIONNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Sy

 9.49. Size:3444K  cn twgmc
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf

BC850S
BC850S

BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86

 9.50. Size:434K  cn cbi
bc846w bc850w.pdf

BC850S
BC850S

BC846WBC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Vol

 9.51. Size:306K  cn cbi
bc846 bc847 bc848 bc849 bc850.pdf

BC850S
BC850S

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended.1.Base 2.Emitter 3.Collector SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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