BC856BWT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: BC856BWT1G
SMD Transistor Code: 3B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Noise Figure, dB: -
Package: SOT323
BC856BWT1G Transistor Equivalent Substitute - Cross-Reference Search
BC856BWT1G Datasheet (PDF)
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BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
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BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
sbc856bwt1g.pdf
BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product
lbc856bwt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
