All Transistors. BC856BWT1G Datasheet

 

BC856BWT1G Datasheet and Replacement


   Type Designator: BC856BWT1G
   SMD Transistor Code: 3B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT323
 

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BC856BWT1G Datasheet (PDF)

 ..1. Size:81K  onsemi
 bc858awt1g bc856bwt1g.pdf pdf_icon

BC856BWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 ..2. Size:78K  onsemi
 bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf pdf_icon

BC856BWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.1. Size:81K  onsemi
 sbc856bwt1g.pdf pdf_icon

BC856BWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 0.2. Size:254K  lrc
 lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf pdf_icon

BC856BWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

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Datasheet: BC850S , BC856ALT1G , BC856AW-G , BC856BDW1T1G , BC856BDW1T3G , BC856BLT1G , BC856BLT3G , BC856BW-G , AC125 , BC856C , BC856LT1 , BC856T , BC857ALT1G , BC857AM , BC857AMB , BC857AW-G , BC857AWR .

History: BLX74 | BC849CR | LBC848CLT1G | LBC848BDW1T1G | LBC848BWT1G | 2SC940 | J460

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