All Transistors. BC857BFA Datasheet

 

BC857BFA Datasheet and Replacement


   Type Designator: BC857BFA
   SMD Transistor Code: 3W
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.435 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: X2-DFN0806-3
 

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BC857BFA Datasheet (PDF)

 ..1. Size:207K  diodes
bc857bfa.pdf pdf_icon

BC857BFA

BC857BFA45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V Case: X2-DFN0806-3 IC = -100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Leve

 7.1. Size:543K  diodes
bc857bfz 1188540.pdf pdf_icon

BC857BFA

BC857BFZ 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V Case: X2-DFN0606-3 IC = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

 7.2. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf pdf_icon

BC857BFA

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 8.1. Size:121K  philips
bc857bv.pdf pdf_icon

BC857BFA

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC857BVPNP general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 10NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2

Datasheet: BC856LT1 , BC856T , BC857ALT1G , BC857AM , BC857AMB , BC857AW-G , BC857AWR , BC857BDW1T1G , BC337 , BC857BFZ , BC857BL3 , BC857BLT1G , BC857BLT3G , BC857BM , BC857BMB , BC857BTT1G , BC857BW-G .

History: TI616 | BC857BFZ | BFP183

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