BCP53T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP53T1G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT223
BCP53T1G Transistor Equivalent Substitute - Cross-Reference Search
BCP53T1G Datasheet (PDF)
bcp53t1g bcp53-10t1g bcp53-16t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp53-16t1g bcp53-16t3g bcp53t1g bcp53-10t1g sbcp53-10t1g sbcp53-16t1g.pdf
BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR
bcp53t1g bcp53-16t1g bcp53-10t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
sbcp53t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow
bcp53t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP53T1/DPNP Silicon BCP53T1Motorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in audio amplifierMEDIUM POWERapplications. The device is housed in the SOT-223 package which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT High C
bcp53t1-d.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current: 1.5 A NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or
bcp53t1 bcp53-10t1 bcp53-16t1.pdf
BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
