All Transistors. BCP56-10T3G Datasheet

 

BCP56-10T3G Datasheet and Replacement


   Type Designator: BCP56-10T3G
   SMD Transistor Code: BH-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: SOT223
 

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BCP56-10T3G Datasheet (PDF)

 ..1. Size:69K  onsemi
 bcp56-10t3g.pdf pdf_icon

BCP56-10T3G

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 0.1. Size:69K  onsemi
 nsvbcp56-10t3g.pdf pdf_icon

BCP56-10T3G

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 5.1. Size:276K  nxp
 bcp56t bcp56-10t bcp56-16t.pdf pdf_icon

BCP56-10T3G

BCP56T series80 V, 1 A NPN medium power transistorsRev. 3 1 July 2022 Product data sheet1. General descriptionNPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBCP56T SOT223 SC-73 BCP53TBCP56-10T BCP53-10TBCP56-16T BCP53-16T2. Features and b

 5.2. Size:151K  onsemi
 bcp56-10t1g bcp56t3g.pdf pdf_icon

BCP56-10T3G

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

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Datasheet: BCM857DS , BCP3904 , BCP53-10T1G , BCP5316Q , BCP53-16T1G , BCP53-16T3G , BCP53T1G , BCP56-10T1G , 2SC2383Y , BCP5616Q , BCP56-16T1G , BCP56-16T3G , BCP56T1G , BCP56T3G , BCP68T1G , BCP69T1G , BCW30LT1G .

History: TBC857

Keywords - BCP56-10T3G transistor datasheet

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