BF257CSM4 Specs and Replacement
Type Designator: BF257CSM4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: LCC3
BF257CSM4 Substitution
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BF257CSM4 datasheet
BF257CSM4 SILICON PLANAR NPN HIGH MECHANICAL DATA VOLTAGE TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) 0.23 rad. (0.009) 3 2 0.23 4 1 min. (0.009) FEATURES High Voltage 1.02 0.20 2.03 0.20 (0.04 0.008) (0.08 0.008) Ceramic Surface Mount... See More ⇒
BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Para... See More ⇒
BF257DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 160V CEO 6.22 0.13 A = 1.27 0.13 I = 0.1A C (0.0... See More ⇒
... See More ⇒
Detailed specifications: BCY78-IX, BCY78-VII, BCY78-VIII, BCY78-X, BCY79-IX, BCY79-VII, BCY79-VIII, BCY79-X, TIP41, BF257DCSM, BF258DCSM, BF422G, BF720T1G, BF721T1G, BF748, BF822W, BFG10WX
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