CMKT2907A Datasheet, Equivalent, Cross Reference Search
Type Designator: CMKT2907A
SMD Transistor Code: K07
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363
CMKT2907A Transistor Equivalent Substitute - Cross-Reference Search
CMKT2907A Datasheet (PDF)
cmkt2907a.pdf
CMKT2907ACMKT2907AGwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL PNP SILICON TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal gen
cmkt2207.pdf
CMKT2207www.centralsemi.comSURFACE MOUNTCOMPLEMENTARY SILICONDESCRIPTION:TRANSISTORSThe CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individually isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small
cmkt2222a.pdf
CMKT2222ASURFACE MOUNTwww.centralsemi.comDUAL NPN SMALL SIGNALDESCRIPTION:SILICON SWITCHINGThe CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORSconsists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general
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