CMUT5551E Datasheet, Equivalent, Cross Reference Search
Type Designator: CMUT5551E
SMD Transistor Code: 5C1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 220 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-523
CMUT5551E Transistor Equivalent Substitute - Cross-Reference Search
CMUT5551E Datasheet (PDF)
cmut5551e.pdf
CMUT5551Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 5C1FEATURES: High Collector Breakdown Voltag
cmut5551.pdf
CMUT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 55CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage
cmut5179.pdf
CMUT5179www.centralsemi.comSURFACE MOUNT NPN SILICONDESCRIPTION:RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: HC7SOT-523 CASE
cmut5401.pdf
CMUT5401www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 54CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage V
cmut5087e cmut5088e series.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
cmut5088e.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
cmut5401e.pdf
CMUT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging.MARKING CODE: 4C5FEATURES:SOT-523 CASE High Collector Bre
cmut5087e.pdf
CMUT5087E PNPCMUT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT5087E and SILICON TRANSISTORSCMUT5088E are Silicon transistors in an ULTRAmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMUT5087E: U87CMUT5088E:
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
