D45H11G Datasheet, Equivalent, Cross Reference Search
Type Designator: D45H11G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-220
D45H11G Transistor Equivalent Substitute - Cross-Reference Search
D45H11G Datasheet (PDF)
d45h11g.pdf
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MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
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Order this documentMOTOROLAby D44H/DSEMICONDUCTOR TECHNICAL DATANPND44H Series*Complementary Silicon PowerPNPD45H Series*Transistors. . . for general purpose power amplification and switching such as output or driver*Motorola Preferred Devicestages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation V
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Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS
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D44H11FPD45H11FPComplementary power transistors .Features Low collector-emitter saturation voltage Fast switching speedApplications Power amplifier 321 Switching circuitsTO-220FPDescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral purpose linear an
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D45H5D45H8 \ D45H11PNP SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING ANDAMPLIFIER 321DESCRIPTION The D45H5, D45H8 and D45H11 are siliconTO-220multiepitaxial planar PNP transistors mounted inJedec TO-220 plastic package.They
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MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche
mjd45h11t4-a.pdf
MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche
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D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
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D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p
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MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d
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April 2010MJD45H11PNP Epitaxial Silicon TransistorApplications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount ApplicationsFeatures Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK: -I Suffix) Electrically Similar to Popular MJE45HD-PAK I-PAK11 Fast Switching Spe
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MJD45H1180 V, 8 A PNP high power bipolar transistor12 September 2019 Product data sheet1. General descriptionPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.NPN complement: MJD44H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mjd45h11t4g.pdf
MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
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MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
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D44H Series (NPN),D45H Series (PNP)Complementary SiliconPower TransistorsThese series of plastic, silicon NPN and PNP power transistors canbe used as general purpose power amplification and switching such ashttp://onsemi.comoutput or driver stages in applications such as switching regulators,converters and power amplifiers.10 AMP COMPLEMENTARYSILICON POWER Features Lo
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MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
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MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
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MJD44H11 (NPN),MJD45H11 (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee
d45h11e3.pdf
Spec. No. : C607E3 Issued Date : 2007.03.07 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor D45H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11E3 TO-220 BBase CCollector EEmitter B C E Ordering
d45h11fp.pdf
Spec. No. : C607FP Issued Date : 2008.04.07 CYStech Electronics Corp.Revised Date : 2013.10.29 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor D45H11FP Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11FPTO-220FP TO-220FP (C forming) (S forming) BBase CCollec
d45h11j3.pdf
Spec. No. : C607J3 Issued Date : 2005.07.11 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -8AD45H11J3 RCESAT 75m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-252(DPAK) D45H11J3BBase B C E C
mjd45h11.pdf
isc Silicon PNP Power Transistors MJD45H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type MJD44H11DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general pourpose power amplification andswitchi
d45h11.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistors D45H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type D44H11Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general pourpose power amplification andswitching such as output o
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: D60T8030 | 2SD2052 | 2N5882 | 2SD1906R | 2SD1948 | 2SD1935
History: D60T8030 | 2SD2052 | 2N5882 | 2SD1906R | 2SD1948 | 2SD1935
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