D45H1B Specs and Replacement

Type Designator: D45H1B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO-220

 D45H1B Substitution

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D45H1B datasheet

 ..1. Size:91K  mospec

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D45H1B

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 9.1. Size:103K  motorola

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D45H1B

Order this document MOTOROLA by D44H/D SEMICONDUCTOR TECHNICAL DATA NPN D44H Series * Complementary Silicon Power PNP D45H Series * Transistors . . . for general purpose power amplification and switching such as output or driver *Motorola Preferred Device stages in applications such as switching regulators, converters and power amplifiers. Low Collector Emitter Saturation V... See More ⇒

 9.2. Size:192K  motorola

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D45H1B

Order this document MOTOROLA by MJD44H11/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD44H11 Complementary Power PNP MJD45H11 * Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in SILICON applications such as switching regulators, converters, and power amplifiers. POWER TRANSISTORS ... See More ⇒

 9.3. Size:174K  st

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D45H1B

D44H11FP D45H11FP Complementary power transistors . Features Low collector-emitter saturation voltage Fast switching speed Applications Power amplifier 3 2 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagram general purpose linear an... See More ⇒

Detailed specifications: D1816, D29D30, D304X, D3DD9D, D44H11G, D44H8G, D44VH10G, D45H11G, 2SC4793, D45H8G, D45VH10G, D471A, D596, D882H, D882M, D965ASS, D965-R

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