DK10 Datasheet. Specs and Replacement
Type Designator: DK10 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-3
- BJT ⓘ Cross-Reference Search
DK10 datasheet
..1. Size:25K shaanxi
dk10.pdf 
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK10 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch... See More ⇒
0.1. Size:180K china
3dk103.pdf
3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 ... See More ⇒
0.2. Size:181K china
3dk101.pdf
3DK101 NPN A B C PCM TC=25 200 mW ICM 40 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 30 20 V V(BR)CEO ICE=0.1mA 20 25 15 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A VB... See More ⇒
0.4. Size:180K china
3dk102.pdf
3DK102 NPN A B C D PCM TC=25 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 20 30 V V(BR)CEO ICE=0.1mA 15 25 15 25 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 ... See More ⇒
0.5. Size:170K china
3dk106.pdf
3DK106 NPN A B C D PCM TC=25 700 mW ICM 600 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1.0... See More ⇒
0.6. Size:169K china
3dk108.pdf
3DK108 NPN A B C D PCM TC=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=20V 0.5 A ICEO VCE=20V 1.0 A IEBO VEB=1.5V 1... See More ⇒
0.7. Size:182K china
3dk100.pdf
3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs... See More ⇒
0.8. Size:169K china
3dk104h.pdf
3DK104H NPN PCM TC=25 700 mW ICM 400 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=4V 0.1 A VBEsat 0.9 IC=30mA V IB=3mA ... See More ⇒
0.9. Size:25K shaanxi
dk100.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK100 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switc... See More ⇒
0.10. Size:25K shaanxi
3dk10.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK10 NPN Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification circuit. 4. Quali... See More ⇒
0.11. Size:31K shaanxi
dk101.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK101, DK151, NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switch... See More ⇒
0.12. Size:32K shaanxi
3dk104.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma... See More ⇒
0.13. Size:183K inchange semiconductor
3dk104b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
0.14. Size:204K inchange semiconductor
3dk104d.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
0.15. Size:183K inchange semiconductor
3dk104f.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
0.16. Size:183K inchange semiconductor
3dk104c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
0.17. Size:205K inchange semiconductor
3dk106.pdf
isc Silicon NPN Power Transistor 3DK106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO DC Current Gain- h = 30 250(Min.)@I = 2A FE C Collector-Emitter Saturation Voltage- V )= 1.5V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , re... See More ⇒
0.18. Size:183K inchange semiconductor
3dk104e.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE ... See More ⇒
Detailed specifications: CHTA42LGP, CHTA42XGP, CHTA42ZGP, CHTA44ZGP, CHTA64ZGP, CHTA92LGP, CHTA92XGP, CHTA92ZGP, 2SC5198, DK100, DK101, DK11, DK150, DK151, DK200, DK201, DK30
Keywords - DK10 pdf specs
DK10 cross reference
DK10 equivalent finder
DK10 pdf lookup
DK10 substitution
DK10 replacement
