DK319 Datasheet. Specs and Replacement
Type Designator: DK319 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-3
DK319 Substitution
- BJT ⓘ Cross-Reference Search
DK319 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK319 NPN Silicon Low Frequency High Power Transistor Features 1. Three pins isn t connected with the cover. It could be produced according to the requirement. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4.... See More ⇒
Detailed specifications: DK151, DK200, DK201, DK30, DK300, DK301, DK31, DK313, TIP142, DK50, DK51, DMA20101, DMA20201, DMA20401, DMA20402, DMA20403, DMA204A0
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