DK319 Datasheet, Equivalent, Cross Reference Search
Type Designator: DK319
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-3
DK319 Transistor Equivalent Substitute - Cross-Reference Search
DK319 Datasheet (PDF)
dk319.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK319NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4.
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .