DSA3G01 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSA3G01
SMD Transistor Code: A4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SSSMINI3-F2-B
DSA3G01 Transistor Equivalent Substitute - Cross-Reference Search
DSA3G01 Datasheet (PDF)
dsa3g01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA3G01Silicon PNP epitaxial planar typeFor high-frequency amplificationDSA9G01 in SSSMini3 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1. Ba
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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