DSA4001 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSA4001
SMD Transistor Code: A1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: NS-B2-B-B
DSA4001 Transistor Equivalent Substitute - Cross-Reference Search
DSA4001 Datasheet (PDF)
dsa4001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4001Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4001DSA2001 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini
dsa4005.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4005Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4005DSA2005 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini
dsa4002.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4002Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4002DSA2002 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B Contributes to miniat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
