DSA4005 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSA4005
SMD Transistor Code: A3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: NS-B2-B-B
DSA4005 Transistor Equivalent Substitute - Cross-Reference Search
DSA4005 Datasheet (PDF)
dsa4005.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4005Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4005DSA2005 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini
dsa4001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4001Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4001DSA2001 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini
dsa4002.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSA4002Silicon PNP epitaxial planar typeFor general amplificationComplementary to DSC4002DSA2002 in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B Contributes to miniat
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
