All Transistors. DSA4G01 Datasheet

 

DSA4G01 Datasheet and Replacement


   Type Designator: DSA4G01
   SMD Transistor Code: A4
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: NS-B2-B-B
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DSA4G01 Datasheet (PDF)

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DSA4G01

DSA4G01Total pages pageTentativeDSA4G01Silicon PNP epitaxial planar typeFor High-frequency AmplifierMarking Symbol A4Package Code : NS-B1-B-BAbsolute Maximum RatingsTa = 25 CParameter Symbol Rating Unit 1. EmitterCollector-base voltage (Emitter open) VCBO -30 V Pin name 2. CollectorCollector-emitter voltage (Base open) VCEO -20 V 3. BaseEmitter-base voltage (Collect

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N5031 | 2SA982 | 2SA416 | 2SC3298A | DMJT9435 | 2N249 | 2N1964

Keywords - DSA4G01 transistor datasheet

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