DSA4G01 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSA4G01
SMD Transistor Code: A4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: NS-B2-B-B
DSA4G01 Transistor Equivalent Substitute - Cross-Reference Search
DSA4G01 Datasheet (PDF)
..1. Size:383K panasonic
dsa4g01.pdf
dsa4g01.pdf
DSA4G01Total pages pageTentativeDSA4G01Silicon PNP epitaxial planar typeFor High-frequency AmplifierMarking Symbol A4Package Code : NS-B1-B-BAbsolute Maximum RatingsTa = 25 CParameter Symbol Rating Unit 1. EmitterCollector-base voltage (Emitter open) VCBO -30 V Pin name 2. CollectorCollector-emitter voltage (Base open) VCEO -20 V 3. BaseEmitter-base voltage (Collect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
