DSA9001 Specs and Replacement
Type Designator: DSA9001
SMD Transistor Code: A1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: SSMINI3-F3-B
DSA9001 Substitution
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DSA9001 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSA9001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC9001 DSA5001 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DSA9005 Silicon PNP epitaxial planar type For general amplification Complementary to DSC9005 DSA5005 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren... See More ⇒
Detailed specifications: DSA7504, DSA7506, DSA7U01, DSA8003, DSA8004, DSA8101, DSA8102, DSA8508, A1941, DSA9005, DSA9402, DSA9G01, DSAF001, DSAFG01, DSAQ001, DSC2001, DSC2002
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