DSAQ001 Datasheet. Specs and Replacement
Type Designator: DSAQ001 📄📄
SMD Transistor Code: A1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: USSMINI3-F1-B
DSAQ001 Substitution
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DSAQ001 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSAQ001 Silicon PNP epitaxial planar type For general amplification Complementary to DSCQ001 DSA3001 in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi... See More ⇒
Detailed specifications: DSA8102, DSA8508, DSA9001, DSA9005, DSA9402, DSA9G01, DSAF001, DSAFG01, 2SC2073, DSC2001, DSC2002, DSC2005, DSC2501, DSC2A01, DSC2C01, DSC2F01, DSC2G02
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