DSC4001 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSC4001
SMD Transistor Code: C1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: NS-B2-B-B
DSC4001 Transistor Equivalent Substitute - Cross-Reference Search
DSC4001 Datasheet (PDF)
dsc4001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC4001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA4001DSC2001 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat) Pin Name Con
dsc4005.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC4005Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA4005DSC2005 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat)Package dimension cli
dsc4002.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC4002 (Tentative)Silicon NPN epitaxial planar typeFor general amplification Packaging PackageRadial type : 5000 pcs / carton Code Absolute Maximum Ratings Ta = 25C NS-B1-B Pin NameParameter Symbol Rating Unit 1. EmitterCollector-base voltage (Emitter open) VCBO 60 V 2. CollectorCollector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
