DSC8P01 Datasheet and Replacement
Type Designator: DSC8P01
SMD Transistor Code: E5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: MT-2-A2-B
DSC8P01 Substitution
DSC8P01 Datasheet (PDF)
dsc8p01.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DSC8P01Silicon NPN epitaxial planar type darlingtonFor low frequency output amplificationDarlington connectionDSC2P01 in MT-2 through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity Contributes to miniaturization of sets, reduction of componen
Datasheet: DSC7101 , DSC7102 , DSC7505 , DSC7Q01 , DSC8003 , DSC8004 , DSC8102 , DSC8505 , 2SC2383Y , DSC8Q01 , DSC9001 , DSC9A01 , DSC9F01 , DSC9G02 , DSCF001 , DSCQ001 , DSS4160DS .
History: D44R6 | CN304 | 2SC3150M
Keywords - DSC8P01 transistor datasheet
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History: D44R6 | CN304 | 2SC3150M



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