DSC8Q01 Datasheet, Equivalent, Cross Reference Search
Type Designator: DSC8Q01
SMD Transistor Code: 5K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: MT-2-A2-B
DSC8Q01 Transistor Equivalent Substitute - Cross-Reference Search
DSC8Q01 Datasheet (PDF)
dsc8q01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSC8Q01Silicon NPN epitaxial planar type darlingtonFor low frequency output amplificationDarlington connectionDSC7Q01 in MT-2 through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity Contributes to miniaturization of sets, reduction of componen
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .