DSC9001 Datasheet. Specs and Replacement
Type Designator: DSC9001
SMD Transistor Code: C1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: SSMINI3-F3-B
DSC9001 Substitution
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DSC9001 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DSC9001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA9001 DSC5001 in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B High forward curren... See More ⇒
Detailed specifications: DSC7505, DSC7Q01, DSC8003, DSC8004, DSC8102, DSC8505, DSC8P01, DSC8Q01, D965, DSC9A01, DSC9F01, DSC9G02, DSCF001, DSCQ001, DSS4160DS, DSS4160T, DSS5160T
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