KT9147A Datasheet and Replacement
Type Designator: KT9147A
SMD Transistor Code: КТ9147А
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 292 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 29 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 420 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: KT-82
KT9147A Substitution
KT9147A Datasheet (PDF)
kt9147a.pdf

Syntez MicroelectronicsKT9147ACSILICON BIPOLAR NPN POWER TRANSISTOR200 W, in the 30 500 MHz Frequency Range23,5The silicon bipolar n-p-n transistor is designed forwideband largesignal output and driver amplifier11,4 max 11,4 maxstages in the 30 to 500 MHz frequency range.Features (At 400 MHz): Output Power: 160 W Power Gain: 6 dB Min38 max Efficiency: 50%
Datasheet: KST50 , KST51 , KST52 , KSU13003E , KSU13003ER , KSU13003HR , KSU13005A , KT9128AC , TIP41C , L14D1 , L14D2 , L14D3 , L14D4 , EMX2 , EMX26 , EMX2DXV6T5G , EMX2FHA .
History: 2SC5171I | KT3102IM | 40616L | BCP52T3 | KRA758U | RCP705B | MJE15035G
Keywords - KT9147A transistor datasheet
KT9147A cross reference
KT9147A equivalent finder
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History: 2SC5171I | KT3102IM | 40616L | BCP52T3 | KRA758U | RCP705B | MJE15035G



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