All Transistors. DMA50601 Datasheet

 

DMA50601 Datasheet and Replacement


   Type Designator: DMA50601
   SMD Transistor Code: B2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-363
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DMA50601 Datasheet (PDF)

 ..1. Size:396K  panasonic
dma50601.pdf pdf_icon

DMA50601

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50601Silicon PNP epitaxial planar typeFor general amplificationDMA20601 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio

 8.1. Size:409K  panasonic
dma506e1.pdf pdf_icon

DMA50601

This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here

 9.1. Size:302K  fairchild semi
fdma507pz.pdf pdf_icon

DMA50601

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

 9.2. Size:405K  panasonic
dma50201.pdf pdf_icon

DMA50601

This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ECG185 | DTC124EEB | 2N2904 | ECG332 | NXP3875G | 2N5784 | 2SA1488

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