DMA50601 Datasheet, Equivalent, Cross Reference Search
Type Designator: DMA50601
SMD Transistor Code: B2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-363
DMA50601 Transistor Equivalent Substitute - Cross-Reference Search
DMA50601 Datasheet (PDF)
dma50601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50601Silicon PNP epitaxial planar typeFor general amplificationDMA20601 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
dma506e1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA506E1Silicon PNP epitaxial planar typeFor general amplificationDMA206E1 in SMini6 type package Package Features High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco-friendly Halogen-free packagePackage dimension clicks here
fdma507pz.pdf
May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist
dma50201.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50201Silicon PNP epitaxial planar typeFor general amplificationDMA20102 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
dma50101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50101Silicon PNP epitaxial planar typeFor general amplificationDMA20101 in SMini5 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reductio
dma50401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMA50401Silicon PNP epitaxial planar typeFor general amplificationDMA20401 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reductio
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB745
