DMBT2222 Specs and Replacement
Type Designator: DMBT2222
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
DMBT2222 Substitution
- BJT ⓘ Cross-Reference Search
DMBT2222 datasheet
DC COMPONENTS CO., LTD. DMBT2222 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.8... See More ⇒
DC COMPONENTS CO., LTD. DMBT2222A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.... See More ⇒
DC COMPONENTS CO., LTD. DMBT2907A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85... See More ⇒
Detailed specifications: DD04T, DD05, DD05T, DMA50101, DMA50201, DMA50401, DMA50601, DMA50601, 2SA1015, DMBT2222A, DMBT2907A, DMBT3904, DMBT3906, DMBT4401, DMBT4403, DMBT5401, DMBT5551
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