DMBT5401 Specs and Replacement
Type Designator: DMBT5401
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT-23
DMBT5401 Substitution
- BJT ⓘ Cross-Reference Search
DMBT5401 datasheet
DC COMPONENTS CO., LTD. DMBT5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .... See More ⇒
DC COMPONENTS CO., LTD. DMBT5551 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .... See More ⇒
Detailed specifications: DMA50601, DMBT2222, DMBT2222A, DMBT2907A, DMBT3904, DMBT3906, DMBT4401, DMBT4403, 2N2907, DMBT5551, DMBT8050, DMBT8550, DMBT9012, DMBT9013, DMBT9014, DMBT9018, DMBTA42
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