DMBT8050 Specs and Replacement

Type Designator: DMBT8050

SMD Transistor Code: J3Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-23

 DMBT8050 Substitution

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DMBT8050 datasheet

 ..1. Size:823K  dc components

 dmbt8050.pdf pdf_icon

DMBT8050

DC COMPONENTS CO., LTD. DMBT8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(2.80) 3 = Collector .047(1.20) .083(2.10) 1 2 .045(1.20) Absolute Maximum Ratings(TA=25oC) .034(0.90) .091(2.30) .0... See More ⇒

 9.1. Size:77K  dc components

 dmbt8550.pdf pdf_icon

DMBT8050

DC COMPONENTS CO., LTD. DMBT8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 .045(1.15) Absolute Maximum Ratings(TA=25oC) .034(0.85) .091(2.30) ... See More ⇒

Detailed specifications: DMBT2222A, DMBT2907A, DMBT3904, DMBT3906, DMBT4401, DMBT4403, DMBT5401, DMBT5551, 2SC828, DMBT8550, DMBT9012, DMBT9013, DMBT9014, DMBT9018, DMBTA42, DMBTA44, DMC20101

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