All Transistors. DMBT9012 Datasheet

 

DMBT9012 Datasheet and Replacement


   Type Designator: DMBT9012
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
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DMBT9012 Datasheet (PDF)

 ..1. Size:173K  dc components
 dmbt9012.pdf pdf_icon

DMBT9012

DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.1. Size:77K  dc components
 dmbt9018.pdf pdf_icon

DMBT9012

DC COMPONENTS CO., LTD.DMBT9018DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in AM/FM amplifier and local oscillator of FM/VHF tuner.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC) .045(1.15).034

 7.2. Size:144K  dc components
 dmbt9013.pdf pdf_icon

DMBT9012

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.3. Size:157K  dc components
 dmbt9014.pdf pdf_icon

DMBT9012

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

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Keywords - DMBT9012 transistor datasheet

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