All Transistors. DMBT9014 Datasheet

 

DMBT9014 Datasheet, Equivalent, Cross Reference Search


   Type Designator: DMBT9014
   SMD Transistor Code: J6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-23

 DMBT9014 Transistor Equivalent Substitute - Cross-Reference Search

   

DMBT9014 Datasheet (PDF)

 ..1. Size:157K  dc components
dmbt9014.pdf

DMBT9014
DMBT9014

DC COMPONENTS CO., LTD.DMBT9014DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in pre-amplifier of low level and low noise.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).

 7.1. Size:77K  dc components
dmbt9018.pdf

DMBT9014

DC COMPONENTS CO., LTD.DMBT9018DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in AM/FM amplifier and local oscillator of FM/VHF tuner.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC) .045(1.15).034

 7.2. Size:173K  dc components
dmbt9012.pdf

DMBT9014
DMBT9014

DC COMPONENTS CO., LTD.DMBT9012DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

 7.3. Size:144K  dc components
dmbt9013.pdf

DMBT9014
DMBT9014

DC COMPONENTS CO., LTD.DMBT9013DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for low frequency amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 33 = Collector .063(1.60) .108(0.65).055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85).091(2.30)Cha

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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