DMC20101 Specs and Replacement

Type Designator: DMC20101

SMD Transistor Code: A1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 210

Noise Figure, dB: -

Package: SOT-753

 DMC20101 Substitution

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DMC20101 datasheet

 ..1. Size:378K  panasonic

dmc20101.pdf pdf_icon

DMC20101

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20101 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam... See More ⇒

 8.1. Size:394K  panasonic

dmc201a0.pdf pdf_icon

DMC20101

This product complies with the RoHS Directive (EU 2002/95/EC). DMC201A0 Silicon NPN epitaxial planar type For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Coll... See More ⇒

 8.2. Size:390K  panasonic

dmc201e0.pdf pdf_icon

DMC20101

This product complies with the RoHS Directive (EU 2002/95/EC). DMC201E0 Silicon NPN epitaxial planar type For High frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Collector (Tr2) Ba... See More ⇒

 9.1. Size:296K  diodes

dmc2038lvt.pdf pdf_icon

DMC20101

DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Device V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 35m @ VGS = 4.5V 4.5A Q1 20V Low Input/Output Leakage 56m @ VGS = 1.8V 3.5A Fast Switching Speed 74m @ VGS = -4.5V 3.1A Q2 -20V Totally Lead-Free & Fully RoHS... See More ⇒

Detailed specifications: DMBT8050, DMBT8550, DMBT9012, DMBT9013, DMBT9014, DMBT9018, DMBTA42, DMBTA44, B647, DMC201A0, DMC201E0, DMC20201, DMC20401, DMC20402, DMC204A0, DMC204B3, DMC204C0

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