DMC20201 Datasheet, Equivalent, Cross Reference Search

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20201Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

A Product Line ofDiodes Incorporated DMC2020USD20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 ID Max Low gate drive Device V(BR)DSS RDS(on) max TA = 25C Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m @ VGS = 4.5V 8.

DMC2038LVTCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID Device V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 35m @ VGS = 4.5V 4.5A Q1 20V Low Input/Output Leakage 56m @ VGS = 1.8V 3.5A Fast Switching Speed 74m @ VGS = -4.5V 3.1A Q2 -20V Totally Lead-Free & Fully RoHS

DMC2004DWKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage VGS(th)

DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4

DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m

DMC2004LPKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: DFN1612-6 Low Gate Threshold Voltage VGS(th)

DMC2004VKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)

This product complies with the RoHS Directive (EU 2002/95/EC).DMC206E2Silicon NPN epitaxial planar typeFor high-frequency amplificationDMC506E2 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20501Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20401Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20601Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC201A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Coll

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20101Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204B3Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20402Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (

This product complies with the RoHS Directive (EU 2002/95/EC).DMC201E0Silicon NPN epitaxial planar typeFor High frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2) Ba

DMC2038LVT-7-Fwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.08