All Transistors. L8050HSLT1G Datasheet

 

L8050HSLT1G Datasheet and Replacement


   Type Designator: L8050HSLT1G
   SMD Transistor Code: 1HG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-23
 

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L8050HSLT1G Datasheet (PDF)

 ..1. Size:88K  lrc
 l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf pdf_icon

L8050HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 ..2. Size:83K  lrc
 l8050hslt1g.pdf pdf_icon

L8050HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGNPN SiliconSeriesS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 ..3. Size:84K  lrc
 l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf pdf_icon

L8050HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 8.1. Size:88K  lrc
 l8050hqlt1g.pdf pdf_icon

L8050HSLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

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Datasheet: L2SC3837T1G , L2SC3838QLT1G , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , L2SD1781KQLT1G , 8550 , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , LBC807-40DMT1G , LBC817-16DMT1G .

History: L2SA1365FLT1G | MJF15030G | CI3403 | TA2735 | 2SD1727 | CD9011H | CHEMD3GP

Keywords - L8050HSLT1G transistor datasheet

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