LBC817-40DPMT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBC817-40DPMT1G
SMD Transistor Code: 56C
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT-457
LBC817-40DPMT1G Transistor Equivalent Substitute - Cross-Reference Search
LBC817-40DPMT1G Datasheet (PDF)
1.1. lbc817-40dmt1g.pdf 
Size:172K _upd
LESHAN RADIO COMPANY, LTD. LBC817-16DMT1G LBC817-25DMT1G Dual General Purpose Transistors LBC817-40DMT1G NPN Duals S-LBC817-16DMT1G • We declare that the material of product compliance with RoHS requirements. S-LBC817-25DMT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40DM
1.2. lbc817-40dpmt1g.pdf Size:494K _upd
LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G Dual General Purpose Transistors LBC817-40DPMT1G NPN/PNP Duals S-LBC817-16DPMT1G • We declare that the material of product compliance with RoHS requirements. S-LBC817-25DPMT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC
1.3. lbc817-40wt1g.pdf Size:170K _lrc
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. LBC817-40WT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emit
1.4. lbc817-40lt1g.pdf Size:280K _lrc
LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G General Purpose Transistors LBC817-40LT1G NPN Silicon S-LBC817-16LT1G S-LBC817-25LT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and S-LBC817-40LT1G Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MA
Datasheet: L9014 , LBC807-16DMT1G , LBC807-25DMT1G , LBC807-40DMT1G , LBC817-16DMT1G , LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , BU508 , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G , LBC858CWT1G , LBCW65ALT1G , M54522WP , M54530FP , M54530P .
