All Transistors. M54522WP Datasheet

 

M54522WP Datasheet, Equivalent, Cross Reference Search

Type Designator: M54522WP

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.79 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 75 °C

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: 18P4X

M54522WP Transistor Equivalent Substitute - Cross-Reference Search

 

M54522WP Datasheet (PDF)

1.1. m54522wp.pdf Size:222K _upd

M54522WP
M54522WP

MITSUBISHI SEMICONDUCTORS M54522WP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION M54522WP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current IN1→ 1 18 →O1 driving with extremely low input-curren

4.1. m54522fp.pdf Size:242K _upd

M54522WP
M54522WP

 M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION PIN CONFIGURATION M54522FP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. ○ NC NC 1 20 Both the semiconductor integrated circuits perform high-current IN1→ 2 19 →O1 driving with extremely low input-cu

 

Datasheet: LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G , LBC858CWT1G , LBCW65ALT1G , SS8550 , M54530FP , M54530P , M54531FP , M54531P , M54531WP , M54532FP , M54532P , M54561P .

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