PBSS5160QA
Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS5160QA
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 12
pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package:
SOT-1215
PBSS5160QA
Transistor Equivalent Substitute - Cross-Reference Search
PBSS5160QA
Datasheet (PDF)
..1. Size:256K nxp
pbss5160qa.pdf 
PBSS5160QA60 V, 1 A PNP low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4160QA.2. Features and benefits Very low collector-emitter
6.1. Size:141K philips
pbss5160ds.pdf
PBSS5160DS60 V, 1 A PNP/PNP low VCEsat (BISS) transistorRev. 03 9 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High c
6.2. Size:284K philips
pbss5160t n.pdf
PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 18 July 2008 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assh
6.3. Size:127K philips
pbss5160u.pdf
PBSS5160U60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 2 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very smallSOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
6.4. Size:258K nxp
pbss5160ds.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.5. Size:268K nxp
pbss5160pap.pdf
PBSS5160PAP60 V, 1 A PNP/PNP low VCEsat (BISS) transistor23 January 2013 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.2. Features and benefits Very low collecto
6.6. Size:691K nxp
pbss5160t.pdf
PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 15 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
6.7. Size:136K nxp
pbss5160v.pdf
PBSS5160V60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie
6.8. Size:280K nxp
pbss5160paps.pdf
PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor24 November 2014 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter saturation volt
6.9. Size:1212K kexin
pbss5160t-hf.pdf
SMD Type TransistorsPNP TransistorsPBSS5160T-HF (KBSS5160T-HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required
6.10. Size:1741K kexin
pbss5160t.pdf
SMD Type TransistorsPNP TransistorsPBSS5160T (KBSS5160T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required1.Base2.E
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