FMMT591DCSM Datasheet and Replacement

FMMT591DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 1A C(0.05

A Product Line ofDiodes IncorporatedFMMT59160V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc

A Product Line ofDiodes IncorporatedFMMT591A40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

FMMT591Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25 TransistorC Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150

FMMT591CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.00

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOVCEO Collector-Emitter Voltage -60 V V

www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value U

FMMT591TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5

FMMT591 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesLow equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti

FMMT591COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-60 VCollector-Emitter Breakdown VoltageV(BR)CBO-80 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Peak Pulse Current ICmA-2.0Power Dissipat

FMMT591PNP Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementary with FMMT4911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5 V

FMMT591 PNP Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementary with FMMT4911.Base 2.Emitter 3.CollectorMarking: 591Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5