LS358 Specs and Replacement
Type Designator: LS358
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: DIP-8 SOIC-8 TO-71 TO-78
LS358 Substitution
- BJT ⓘ Cross-Reference Search
LS358 datasheet
LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS FEATURES LOG CONFORMANCE re 1 from ideal TYP. C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25 C unless otherwise noted) IC Collector-Current -10mA Maximum Temperatures Storage Temperature Range -65 C to +150 C Operating Junction Temperature -55 C to +150 C B1 E1 E2 B2 Maximum Power Dissipation ONE SI... See More ⇒
Detailed specifications: LS3250B , LS3250C , LS350 , LS351 , LS352 , LS3550A , LS3550B , LS3550C , TIP142 , LSBTH10T1G , LSSBTH10T1G , M28S-B , M28S-C , M28S-D , MIMD10A , MJ11012G , MJ11015G .
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