MJ14003G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJ14003G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 2000 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
MJ14003G Transistor Equivalent Substitute - Cross-Reference Search
MJ14003G Datasheet (PDF)
mj14003g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
mj14001 mj14002 mj14003 mj14003g mj14002g mj14001g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
mj14001 mj14002 mj14003.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
mj14001r.pdf
Order this documentMOTOROLAby MJ14001/DSEMICONDUCTOR TECHNICAL DATANPNMJ14002*High-Current ComplementaryPNPMJ14001Silicon Power Transistors. . . designed for use in highpower amplifier and switching circuit applications,MJ14003* High Current Capability IC Continuous = 60 Amperes DC Current Gain hFE = 15100 @ IC = 50 Adc*Motorola Preferred Device
mj14002g.pdf
MJ14001 (PNP),MJ14002* (NPN),MJ14003* (PNP)*Preferred DevicesHigh-Current ComplementarySilicon Power TransistorsDesigned for use in high-power amplifier and switching circuithttp://onsemi.comapplications.Features60 AMPERE High Current Capability - IC Continuous = 60 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15-100 @ IC = 50 AdcPOWER TRANSISTORS
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC693FP | 2SC780G | NKT5 | RT3C77M | 3DD13003_J6D | 3DD13003F3D
History: 2SC693FP | 2SC780G | NKT5 | RT3C77M | 3DD13003_J6D | 3DD13003F3D
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050