MJ15003G Datasheet and Replacement
Type Designator: MJ15003G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 1000 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
MJ15003G Substitution
MJ15003G Datasheet (PDF)
mj15003g.pdf

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearhttp://onsemi.comapplications.Features 20 AMPEREPOWER TRANSISTORS High Safe Operating Area (100% Tested) - 5.0 A @ 50 V For Low Distortion Complementary DesignsCOMPLEMENTARY SIL
mj15003r.pdf

Order this documentMOTOROLAby MJ15003/DSEMICONDUCTOR TECHNICAL DATANPNMJ15003*Complementary Silicon PowerPNPMJ15004*TransistorsThe MJ15003 and MJ15004 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. High Safe Operating Area (100% Tested) 20 AMPERE250 W @ 50 V POWER TRA
mj15003 mj15004.pdf

MJ15003 (NPN),MJ15004 (PNP)Complementary SiliconPower TransistorsThe MJ15003 and MJ15004 are power transistors designed for highpower audio, disk head positioners and other linear applications.http://onsemi.comFeatures20 AMPERE High Safe Operating Area For Low Distortion Complementary Designs POWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON These
Datasheet: MJ11022G , MJ11028G , MJ11032G , MJ11033G , MJ13009 , MJ14002G , MJ14003G , MJ15001G , C945 , MJ15004G , MJ15015G , MJ15016G , MJ15022G , MJ15023G , MJ15024G , MJ15025G , MJ16018-1400V .
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