MJD122G Datasheet. Specs and Replacement
Type Designator: MJD122G
SMD Transistor Code: J112G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252
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MJD122G datasheet
..1. Size:205K onsemi
mjd122g.pdf 
MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N... See More ⇒
8.1. Size:284K motorola
mjd122re mjd127.pdf
Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS... See More ⇒
8.2. Size:93K st
mjd122 mjd127.pdf
MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix ... See More ⇒
8.3. Size:205K onsemi
mjd122t4g.pdf
MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N... See More ⇒
8.4. Size:142K onsemi
njvmjd122 njvmjd127.pdf
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements... See More ⇒
8.5. Size:403K cdil
mjd122 7.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD122 NPN MJD127 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage V... See More ⇒
8.6. Size:163K lge
mjd122.pdf
MJD122(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Bas... See More ⇒
8.7. Size:664K wietron
mjd122.pdf
MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * High DC current gain D-PAK(TO-252) * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO 100 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5... See More ⇒
8.8. Size:421K first silicon
mjd122i.pdf
SEMICONDUCTOR MJD122I TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I TO-251-3L FEATURES High DC Current Gain 1.BASE Electrically Similar to Popular TIP122 Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER We declare that the material of product compliance with RoHS requirements. Equivalent Circuit C B R1 R2 R1 8k E R2 0.12k MAXI... See More ⇒
8.9. Size:451K first silicon
mjd122.pdf
SEMICONDUCTOR MJD122 TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I A I FEATURES C J High DC Current Gain Electrically Similar to Popular TIP122 DIM MILLIMETERS A 6.50 0.2 Built-in a Damper Diode at E-C B 5.60 0.2 C 5.20 0.2 D 1.50 0.2 We declare that the material of E 2.70 0.2 F 2.30 0.1 product compliance with RoHS requirements. ... See More ⇒
8.10. Size:884K slkor
mjd122d.pdf
MJD122D Silicon NPN Darlington Power Transistor DESCRIPTION Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: MJB5742T4G, MJD112-1G, MJD112G, MJD112RLG, MJD112T4G, MJD117-1G, MJD117G, MJD117T4G, S8550, MJD122T4G, MJD127G, MJD127T4G, MJD128T4G, MJD148T4G, MJD200G, MJD200RLG, MJD200T4G
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