All Transistors. MJD200RLG Datasheet

 

MJD200RLG Datasheet and Replacement


   Type Designator: MJD200RLG
   SMD Transistor Code: J200G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO-252

 MJD200RLG Transistor Equivalent Substitute - Cross-Reference Search

   

MJD200RLG Datasheet (PDF)

 ..1. Size:183K  onsemi
mjd200rlg.pdf pdf_icon

MJD200RLG

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒

 7.1. Size:236K  motorola
mjd200re mjd210.pdf pdf_icon

MJD200RLG

Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @ ... See More ⇒

 8.1. Size:48K  st
mjd200 mjd210.pdf pdf_icon

MJD200RLG

MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th... See More ⇒

 8.2. Size:183K  onsemi
mjd200g.pdf pdf_icon

MJD200RLG

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒

Datasheet: MJD117T4G , MJD122G , MJD122T4G , MJD127G , MJD127T4G , MJD128T4G , MJD148T4G , MJD200G , 2SA1837 , MJD200T4G , MJD210G , MJD210RLG , MJD210T4G , MJD243G , MJD243T4G , MJD253-1G , MJD253T4G .

History: BUS23C | 2SC3788 | 2SD2651 | MJD122G

Keywords - MJD200RLG transistor datasheet

 MJD200RLG cross reference
 MJD200RLG equivalent finder
 MJD200RLG lookup
 MJD200RLG substitution
 MJD200RLG replacement

 

 
Back to Top

 


 
.