All Transistors. MJD210G Datasheet

 

MJD210G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJD210G
   SMD Transistor Code: J210G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 120 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO-252

 MJD210G Transistor Equivalent Substitute - Cross-Reference Search

   

MJD210G Datasheet (PDF)

 ..1. Size:183K  onsemi
mjd210g.pdf

MJD210G
MJD210G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.1. Size:236K  motorola
mjd200re mjd210.pdf

MJD210G
MJD210G

Order this documentMOTOROLAby MJD200/DSEMICONDUCTOR TECHNICAL DATANPNMJD200ComplementaryPNPPlastic Power TransistorsMJD210NPN/PNP Silicon DPAK For Surface MountApplications. .

 8.2. Size:48K  st
mjd200 mjd210.pdf

MJD210G
MJD210G

MJD200MJD210COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS1DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistordesigned for low voltage, low power, high gain,DPAKaudio amplifier applications.TO-252Th

 8.3. Size:46K  fairchild semi
mjd210.pdf

MJD210G
MJD210G

MJD210D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VC

 8.4. Size:183K  onsemi
mjd210t4g.pdf

MJD210G
MJD210G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.5. Size:142K  onsemi
njvmjd210 mjd200.pdf

MJD210G
MJD210G

MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix

 8.6. Size:242K  onsemi
mjd200 mjd210.pdf

MJD210G
MJD210G

Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For SurfaceMount ApplicationsMJD200 (NPN),MJD210 (PNP)www.onsemi.comDesigned for low voltage, low-power, high-gain audioamplifier applications.SILICONPOWER TRANSISTORSFeatures High DC Current Gain5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves25 VOLTS, 12.5 WATTS(No Suffix)

 8.7. Size:183K  onsemi
mjd210rlg.pdf

MJD210G
MJD210G

MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

 8.8. Size:203K  utc
mjd210.pdf

MJD210G
MJD210G

UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1*Collector-Emitter Sustaining Voltage TO-251VCEO(SUS) =-25V (Min) @ IC =-10mA *High DC Current Gain hFE =70 (Min) @ IC=-500mA =4

 8.9. Size:206K  inchange semiconductor
mjd210.pdf

MJD210G
MJD210G

isc Silicon PNP Power Transistor MJD210DESCRIPTIONHigh DC Current Gain-: h = 70(Min) @ I = -0.5AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJD200Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low voltage, low -power ,high-gain audioamplifier applic

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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