MJD210T4G Datasheet PDF and Equivalents Search

 ..1. Size:183K  onsemi

 mjd210t4g.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒

 8.1. Size:236K  motorola

 mjd200re mjd210.pdf

Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @ ... See More ⇒

 8.2. Size:48K  st

 mjd200 mjd210.pdf

MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th... See More ⇒

 8.3. Size:46K  fairchild semi

 mjd210.pdf

MJD210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VC... See More ⇒

 8.4. Size:183K  onsemi

 mjd210g.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒

 8.5. Size:142K  onsemi

 njvmjd210 mjd200.pdf

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix... See More ⇒

 8.6. Size:242K  onsemi

 mjd200 mjd210.pdf

Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications MJD200 (NPN), MJD210 (PNP) www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. SILICON POWER TRANSISTORS Features High DC Current Gain 5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves 25 VOLTS, 12.5 WATTS (No Suffix) ... See More ⇒

 8.7. Size:183K  onsemi

 mjd210rlg.pdf

MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒

 8.8. Size:203K  utc

 mjd210.pdf

UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage TO-251 VCEO(SUS) =-25V (Min) @ IC =-10mA *High DC Current Gain hFE =70 (Min) @ IC=-500mA =4... See More ⇒

 8.9. Size:206K  inchange semiconductor

 mjd210.pdf

isc Silicon PNP Power Transistor MJD210 DESCRIPTION High DC Current Gain- h = 70(Min) @ I = -0.5A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJD200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applic... See More ⇒