MJD243G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD243G
SMD Transistor Code: J243G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-252
MJD243G Transistor Equivalent Substitute - Cross-Reference Search
MJD243G Datasheet (PDF)
mjd243g.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd243re.pdf
Order this documentMOTOROLAby MJD243/DSEMICONDUCTOR TECHNICAL DATAPlastic Power Transistor MJD243*DPAK For Surface Mount Applications*Motorola Preferred Device. . . designed for low voltage, lowpower, highgain audio amplifier applications.NPN SILICON CollectorEmitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdcPOWER TRANSISTOR High DC Curr
mjd243 mjd253.pdf
MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL
njvmjd243 njvmjd253.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd243t4g.pdf
MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu
mjd243.pdf
isc Silicon NPN Power Transistor MJD243DESCRIPTIONDC Current Gain-: h = 40(Min) @ I = 0.2 AFE CLow Collector Saturation Voltage-: V = 0.3V(Max.)@ I = 0.5 ACE(sat) CComplement to the PNP MJD253Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low power audio amplifier and low-current,high-speed switching
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
