MJD31CT4-A Datasheet. Specs and Replacement

Type Designator: MJD31CT4-A  📄📄 

SMD Transistor Code: MJD31C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-252

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MJD31CT4-A datasheet

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MJD31CT4-A

MJD31CT4-A Low voltage NPN power transistor Datasheet - production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The dev... See More ⇒

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MJD31CT4-A

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

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MJD31CT4-A

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MJD31CT4-A

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒

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Detailed specifications: MJD2955G, MJD2955T4G, MJD3055G, MJD3055T4G, MJD31C1G, MJD31CG, MJD31CQ, MJD31CRLG, 2SB817, MJD31CT4G, MJD31T4G, MJD32CG, MJD32CQ, MJD32CRLG, MJD32CT4-A, MJD32CT4G, MJD340G

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