MJD32CG Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD32CG
SMD Transistor Code: J32CG
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-252
MJD32CG Transistor Equivalent Substitute - Cross-Reference Search
MJD32CG Datasheet (PDF)
mjd32cg.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR
mjd32c.pdf
MJD32CLow voltage PNP power transistorDatasheet - production dataFeatures Surface-mounting TO-252 power package in TABtape and reel Complementary to the NPN type MJD31C3Application1 General purpose linear and switching equipmentDPAKTO-252DescriptionThe device is manufactured in planar technology with base island layout. The resulting transistor
mjd32ct4-a.pdf
MJD32CT4-AAutomotive-grade low voltage PNP power transistorDatasheet - production dataFeatures AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reelTAB Complementary to the NPN type MJD31CT4-A3Applications1 General purpose linear and switching DPAKequipmentDescriptionThe device is manufactured in planar technology Figure 1. Inte
mjd32c.pdf
MJD32/32CGeneral Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK Straight Lead (I-PAK, - I Suffix) 11 Electrically Similar to Popular TIP32 and TIP32C1.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherw
mjd32c.pdf
MJD32C100 V, 3 A PNP high power bipolar transistor30 September 2019 Product data sheet1. General descriptionPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.NPN complement: MJD31C2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric
mjd32c.pdf
MJD32C 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > -100V Case: TO252 (DPAK) IC = -3A high Continuous Collector Current Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 ICM = -5A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Power Switching or A
mjd32cq.pdf
NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case: TO252 (DPAK) This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture
mjd32ct4g.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl
mjd32crlg.pdf
MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.Features Lead Formed for Surface Mount Appl
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf
NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm
mjd32c.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD32C TRANSISTOR (PNP) FEATURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves (1 Suffix)
mjd32c.pdf
MJD32C(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) TO-252-2LLead Formed Version in 16 mm Tape and Reel (T4 Suffix)
mjd32c.pdf
SEMICONDUCTORMJD32CTECHNICAL DATA MJD32C TRANSISTOR (PNP) AICJFEATURES Designed for General Purpose Amplifier and Low Speed Switching ApplicationsDIM MILLIMETERS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) A 6 50 0 2B 5 60 0 2 Straight Lead Version in Plastic Sleeves (1 Suffix) C 5 20 0 2D 1 50 0 2 Lead Formed
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
