MMBR911L Datasheet. Specs and Replacement

Type Designator: MMBR911L  📄📄 

SMD Transistor Code: 7P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.333 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.06 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6000 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT-23

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MMBR911L datasheet

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MMBR911L

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MMBR911L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig... See More ⇒

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MMBR911L

MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit / ... See More ⇒

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MMBR911L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒

Detailed specifications: MJD50G, MJD50T4G, MJD5731T4G, MJD6039T4G, MM420, MM421, MMBR571L, MMBR901L, 2N3904, MMBR920L, MMBR931L, MMBR941L, MMBR951L, MMBT1015-H, MMBT1015-L, MMBT1116, MMBT1116A

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